Jordan R. Lang

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

David A. Browne, Erin C. Young, Jordan R. Lang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 96 citations

Engineering, Materials Engineering, Materials Science +17

GaAsP solar cells on GaP/Si with low threading dislocation density

Kevin Nay Yaung, Michelle Vaisman, Jordan R. Lang et al. · Applied Physics Letters · 2016 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of doping and polarization on carrier collection in InGaN quantum well solar cells

Carl J. Neufeld, Samantha C. Cruz, Robert M. Farrell et al. · Applied Physics Letters · 2011 · 84 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison of GaAsP solar cells on GaP and GaP/Si

Jordan R. Lang, Joseph Faucher, Stephanie Tomasulo et al. · Applied Physics Letters · 2013 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

Christophe A. Hurni, Oliver Bierwagen, Jordan R. Lang et al. · Applied Physics Letters · 2010 · 48 citations

Engineering, Electrical Engineering, Materials Science +17