Effect of doping and polarization on carrier collection in InGaN quantum well solar cells

Abstract

The effect of doping and polarization on carrier collection is investigated for InGaN quantum well solar cells. Energy band diagram simulations of actual devices indicate that spontaneous and piezoelectric polarization sheet charges can inhibit carrier collection unless these charges are screened by sufficient doping. By increasing the doping on both sides of the active region, the polarization-induced barriers to carrier collection were eliminated and the short circuit current density was increased from 0.1 to 1.32 mA/cm2 under 1.5 sun AM1.5G equivalent illumination, leading to devices with an open circuit voltage of 1.9 V and a fill factor of 71%.