David A. Browne

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

Ramya Yeluri, Jing Lu, Christophe A. Hurni et al. · Applied Physics Letters · 2015 · 96 citations

Engineering, Electrical Engineering, Materials Science +17

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

David A. Browne, Erin C. Young, Jordan R. Lang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 96 citations

Engineering, Materials Engineering, Materials Science +17

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

Christophe A. Hurni, Oliver Bierwagen, Jordan R. Lang et al. · Applied Physics Letters · 2010 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

David A. Browne, B. Mazumder, Yuh‐Renn Wu et al. · Journal of Applied Physics · 2015 · 46 citations · Full text

Engineering, Materials Science, Physics +17

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

Akhil Ajay, Caroline B. Lim, David A. Browne et al. · Nanotechnology · 2017 · 28 citations · Full text

Engineering, Materials Engineering, Materials Science +17