Concepedia

Growth of Si-doped InAs quantum dots and annealing effects on size distribution

Jin Soo Kim, Phil Won Yu, Jae‐Young Leem, Joo In Lee, Sam Kyu Noh, Jong Su Kim, Gu Hyun Kim, Se-Kyung Kang, Seung Il Ban, Song Gang Kim,

Journal of Crystal Growth · 2002 · 23 citations · 20 references

DOI

Concepts

References

20

Multidimensional quantum well laser and temperature dependence of its threshold current

Yasuhiko Arakawa, H. Sakaki · Applied Physics Letters · 1982 · 3.3K citations

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A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 592 citations

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Radiative recombination in type-II GaSb/GaAs quantum dots

Fariba Hatami, N. N. Ledentsov, Marius Grundmann et al. · Applied Physics Letters · 1995 · 324 citations

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Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

F. Heinrichsdorff, M. Mao, N. Kirstaedter et al. · Applied Physics Letters · 1997 · 321 citations

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Red-Emitting Semiconductor Quantum Dot Lasers

S. Fafard, Karin Hinzer, S. Raymond et al. · Science · 1996 · 292 citations

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