1.54μm emission mechanism of Er-doped zinc oxide thin films

1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon

H. Ennen, J. Schneider, Gernot S. Pomrenke et al. · Applied Physics Letters · 1983 · 566 citations

Engineering, Materials Engineering, Materials Science +15

Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

P.N. Favennec, H. L’Haridon, M. Salvi et al. · Electronics Letters · 1989 · 439 citations

Engineering, Materials Engineering, Materials Science +17

Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

A. J. Steckl, R. Birkhahn · Applied Physics Letters · 1998 · 215 citations

Natural Sciences, Materials Engineering, Materials Science +17

Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2

G. Franzò, Simona Boninelli, Domenico Pacifici et al. · Applied Physics Letters · 2003 · 161 citations

Natural Sciences, Materials Engineering, Materials Science +13

Local structure analysis of an optically active center in Er-doped ZnO thin film

Masashi Ishii, Shuji Komuro, Takitaro Morikawa et al. · Journal of Applied Physics · 2001 · 126 citations

Natural Sciences, Materials Engineering, Materials Science +17