Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P

Abstract

The temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P, lattice-matched to GaAs, has been measured on a series of p+-i-n+ and n+-i-p+ diodes with nominal avalanche region thicknesses ranging from 0.068 to 1.0 μm from 77.8 to 298 K. From this, impact ionization coefficients as a function of temperature have been determined. For a given avalanche region thickness, Al0.52In0.48P exhibits temperature coefficient of breakdown voltage smaller than those of Ga0.52In0.48P and Al0.6Ga0.4As by approximately 1.6× and 2.0×, respectively. Our analysis shows that the alloy disorder potential and alloy composition ratio may be responsible for the large variation in temperature coefficient of breakdown voltages observed in a range of III–V ternary semiconductors.