Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor

Abstract

We investigated the dependence of the electroluminescence (EL) characteristics on the layer thickness and the solid-phase composition of AlGaN clad layers in GaInN single-quantum-well light-emitting diodes (LEDs), and how to control the emission wavelength by the device structure. GaInN well layers were sandwiched by AlGaN clad layers, and GaInN inter layers were inserted between GaN n-contact and AlGaN n-clad layers. A wavelength shift of about 50 nm was achieved by changing either the Al solid-phase composition or the thickness of the clad layer. Due to an increase of the lattice mismatch between the clad and the well layers, the emission wavelength increased and the peak intensity decreased. Compared with the performance without an inter layer, the peak intensity increased 3.8 times. Moreover, by changing the growth temperature of the well layer, the LED wavelength can be varied from blue to red. Though the difference of the emission wavelength was 40 nm in the radial direction of the wafer, a luminous intensity of 1 cd for yellowish LEDs was achieved.