Applied Physics Letters · 2005 · 330 citations · 13 references
Optical MaterialsEngineeringOptoelectronic DevicesEnhanced Light ExtractionOptical PropertiesLight-emitting DiodesGan-based Light-emitting DiodesOptical SystemsLaser HolographyNanophotonicsSignificant EnhancementPhotonicsPhysicsOptoelectronic MaterialsPhotonic MaterialsNew Lighting TechnologyAluminum Gallium NitridePhotonic DeviceWhite OledLight OutputSolid-state LightingApplied PhysicsOptoelectronics
We observed a significant enhancement in light output from GaN-based light-emitting diodes (LEDs) in which two-dimensional photonic crystal (PC) patterns were integrated. Two-dimensional square-lattice air-hole array patterns with a period that varied from 300 to 700 nm were generated by laser holography. Unlike the commonly utilized electron-beam lithographic technique, the holographic method can make patterns over a large area with high throughput. The resultant PC-LED devices with a pattern period of ∼500nm had more than double the output power, as measured from the top of the device. The experimental observations are qualitatively consistent with the results of three-dimensional finite-difference-time-domain simulation.
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Surface-plasmon-enhanced light emitters based on InGaN quantum wells
Koichi Okamoto, Isamu Niki, Alexander Shvartser et al. · Nature Materials · 2004 · 1.4K citations
Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi et al. · Japanese Journal of Applied Physics · 2001 · 375 citations
Materials Science, Patterned Sapphire Substrate, Electrical Engineering +14
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