Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots

1.3 μm room-temperature GaAs-based quantum-dot laser

Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations

Engineering, Electrical Engineering, Materials Science +15

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 592 citations

Engineering, Materials Engineering, Materials Science +17

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov, N. A. Maleev, A. E. Zhukov et al. · Applied Physics Letters · 1999 · 378 citations

Engineering, Electrical Engineering, Materials Science +13

Low-threshold oxide-confined 1.3-μm quantum-dot laser

Gyoungwon Park, O.B. Shchekin, Diana L. Huffaker et al. · IEEE Photonics Technology Letters · 2000 · 285 citations

Engineering, Electrical Engineering, Optoelectronics +14

GaAs-based long-wavelength lasers

V. M. Ustinov, A. E. Zhukov · Semiconductor Science and Technology · 2000 · 191 citations

Engineering, Electrical Engineering, Materials Science +17