Solution growth of high-quality 3C-SiC crystals

Growth and Properties of β-SiC Single Crystals

W. E. Nelson, F. A. Halden, A. Rosengreen · Journal of Applied Physics · 1966 · 229 citations

Engineering, Materials Engineering, Materials Science +17

Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices

Akira Itoh, H. Matsunami · physica status solidi (a) · 1997 · 164 citations

Engineering, Electrical Engineering, Materials Science +16

3C-SiC hetero-epitaxial growth on undulant Si(001) substrate

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara · Journal of Crystal Growth · 2002 · 130 citations

Engineering, Materials Engineering, Materials Science +14

3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates

Hiroyuki Nagasawa, Kuniaki Yagi · physica status solidi (b) · 1997 · 118 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics

C. W. Liu, Johannes Sturm · Journal of Applied Physics · 1997 · 103 citations

Engineering, Materials Engineering, Materials Science +17