Emission wavelength dependence of characteristic temperature of InGaN laser diodes

Abstract

We have determined thermal stability of various InGaN laser diodes emitting in the spectral range of 390-436 nm. Their characteristic temperature T0 increases steeply with the increasing emission wavelength, reaching the value of around 230 K. Our analysis of current-light characteristics and activation energy of electroluminescence proves that this behavior is predominantly related to the thermal escape of electrons from quantum wells, which depends critically on their depth.