J. H. Goss

Graded-index separate confinement heterostructure InGaN laser diodes

Szymon Stańczyk, Tomasz Czyszanowski, Anna Kafar et al. · Applied Physics Letters · 2013 · 37 citations · Full text

Optical Materials, Engineering, Al Content +18

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate

Anna Kafar, Szymon Stańczyk, M. Sarzyński et al. · Optics Express · 2016 · 29 citations · Full text

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

Anna Kafar, Szymon Stańczyk, M. Sarzyński et al. · Photonics Research · 2017 · 17 citations

Wide-bandgap Semiconductor, Engineering, Substrate Surface Shape +17

Emission wavelength dependence of characteristic temperature of InGaN laser diodes

Agata Bojarska, J. H. Goss, Łucja Marona et al. · Applied Physics Letters · 2013 · 12 citations

Photonics, Electrical Engineering, Solid-state Lighting +13

Blue laser diodes for trace matter detection

Katarzyna Holc, Z. Bielecki, J. Wojtas et al. · Optica Applicata · 2010 · 11 citations

Engineering, Laser Science, High Pressure Physics +17