Applied Physics Letters · 1977 · 23 citations · 4 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor PhysicsSemiconductor Thin FilmsSolar Cell MaterialsSolar CellsAntireflection CoatingsHeterojunction Solar CellsHeterojunctionsP-n Junction Solar CellsRecombination LossesSemiconductor HeterojunctionsSolar Cell FabricationSurface Recombination
Conversion efficiencies as high 15.3% (17% when corrected for contact area) have been obtained for single-crystal antireflection-coated GaAs solar cells fabricated without the use of Ga1−xAlxAs layers. These devices employ a thin n+/p/p+ structure prepared by chemical vapor deposition, in which surface recombination losses are reduced because the n+ layer is so thin (1300 Å) that most of the carriers are generated in the p layer below the junction.
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