Impact of generation current on the evaluation of the depletion width in heavily irradiated Si detectors

Abstract

The depletion width and full depletion condition are essential parameters in the search for radiation tolerant detector design and operational regimes. In this work, results of measurements of barrier capacitance by combining a transient technique for barrier evaluation by linearly increasing voltage (BELIV), with temperature dependent capacitance-voltage and current-voltage characteristics of neutron irradiated Si pin detectors are discussed. It is shown that the generation current, caused by a high density of radiation induced traps, distorts the capacitance measurements in heavily irradiated devices. There is no space charge sign inversion effect, however, and heavily irradiated detectors become fully depleted in equilibrium.