T. Čeponis

Correlative analysis of the <i>in situ</i> changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN

E. Gaubas, T. Čeponis, A. Jasiunas et al. · Applied Physics Letters · 2014 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +15

Fluence dependent variations of barrier charging and generation currents in neutron and proton irradiated Si particle detectors

E. Gaubas, T. Čeponis, S. Sakalauskas et al. · Lithuanian Journal of Physics · 2011 · 16 citations · Full text

Impact of generation current on the evaluation of the depletion width in heavily irradiated Si detectors

E. Gaubas, T. Čeponis, J. Vaitkus · Journal of Applied Physics · 2011 · 14 citations

Electrical Engineering, Depletion Width, Engineering +15

Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN

Toni Heikkinen, Julius Pavlov, T. Čeponis et al. · Journal of Crystal Growth · 2020 · 14 citations · Full text

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +8

Study of neutron irradiated structures of ammonothermal GaN

E. Gaubas, T. Čeponis, L. Deveikis et al. · Journal of Physics D Applied Physics · 2017 · 13 citations · Full text

Engineering, Aluminum Gallium Nitride, Applied Physics +3