Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector

Abstract

We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , sharp switching slope of <;5 mV/decade, ability to tune the threshold voltage, stable operation at 125°C, and endurance of >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> . Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <;10 pA while offering >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> memory ON/OFF ratio and >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.