Publication | Closed Access
High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications
15
Citations
0
References
2003
Year
Unknown Venue
EngineeringWireless Circuit ApplicationsIntegrated CircuitsPower ElectronicsHigh PerformanceLow Wafer CostElectromagnetic CompatibilityRf SemiconductorElectronic EngineeringMixed-signal Integrated CircuitHigh Frequency PerformanceElectronic CircuitLow Current DensityElectrical EngineeringHigh-frequency DeviceComputer EngineeringMicroelectronicsLow-power ElectronicsLow Complexity 0.18
High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F/sub t//F/sub max/ of 60/85 GHz with a 3.0 V BV/sub CEO/. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.