IEEE Transactions on Electron Devices · 2015 · 50 citations · 28 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice ModelingMemory DevicesMemristive MaterialsNoise In Electronic DevicesNoise In Semiconductor DevicesAnalytical ModelsEnduranceFinite Element ModelingMemristive MemoryMultilevel Resistance StatesNoise ContributionsRandom Telegraph NoiseResistive Switching
Resistive-switching memory (RRAM) is attracting a widespread interest for its outstanding properties, such as low power, high speed, and good endurance. A crucial concern for RRAM is the current fluctuation, which induces significant broadening of resistance levels in single-bit and multilevel applications. This paper addresses low-frequency fluctuations focusing on 1/f and random telegraph noise contributions in intrinsic, i.e., typical, cells. The current fluctuations are studied in both the time and frequency domains, and the analytical models are presented to predict the resistance broadening for different RRAM states. Finally, the resistance dependence of noise and broadening is studied with the support of a 3-D finite-element model.
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Analysis and Design of Analog Integrated Circuits
W.R. Betts · Electronics and Power · 1978 · 3.8K citations
H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations