Continuous wave lasing in GaInAsP microdisk injectionlaser with threshold current of 40 µA

Abstract

A threshold current of 40 µA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching.