Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox>32Å)

Abstract

This paper presents reliability results related to ultra-thin oxides (20/spl Aring/< Tox < 32/spl Aring/). First of all Voltage to Breakdown (Vbd) is evidenced to linearly depend on the oxide thickness. Moreover, its acceleration factor is found independent of temperature and oxide thickness. Consequently, an empirical model is proposed for the voltage to breakdown dependencies. This model can be transposed to the time to breakdown (Tbd) analysis and a good agreement is found for Tbd prediction and experimental observations. Relationship to other literature models is also discussed.