X-band GaInP/GaAs power heterojunction bipolar transistor

Abstract

The large-signal performance of GaInP/GaAs HBTs (heterojunction bipolar transistors) at X-band is reported on. A CW (continuous wave) output power of 1.0 W is obtained from a GaInP/GaAs HBT consisting of ten 2- mu m*30- mu m emitter fingers, corresponding to a powder density of 33.3 W/mm. The associated power gain is 5 dB and the power-added efficiency is 40%. In addition, a record-high f/sub T/ of 50 GHz and f/sub max/ of 116 GHz are measured for a two-finger HBT. These results compare favorably with those measured for AlGaAs/GaAs HBTs, demonstrating that GaInP/GaAs HBTs are suitable for microwave power applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>