Applied Physics Letters · 2007 · 26 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsNanotechnologySemiconductor MaterialsMemory DevicesMemristive MaterialsPhase ChangeSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsLaser AblationLaser Surface AblationMemory MaterialsNanoelectronic Memory DevicesNonvolatile Memory MaterialsPhase-change MaterialsPhase-change MemoryPhase-change Nanomaterials
Electrical characteristics of Ge2Sb2Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon et al., J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.
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H. Gleiter · Progress in Materials Science · 1989 · 3.7K citations · Full text
Understanding the phase-change mechanism of rewritable optical media
Alexander V. Kolobov, Paul Fons, Anatoly I. Frenkel et al. · Nature Materials · 2004 · 1.3K citations
R. Bez, E. Camerlenghi, Alberto Modelli et al. · Proceedings of the IEEE · 2003 · 822 citations
Engineering, Computer Engineering, Electrical Engineering +17