An above-IC RF-MEMS switch

D. Saias, S. Boret, Ph. Robert, C. Billard, P.L. Charvet, G. Bouche, B. Diem, J.B. Quoirin, B. Berruyer, M. Laurens,

2003 · 10 citations · 4 references

Concepts

Abstract

A MEMS switch is driven by a 0.25/spl mu/m BiCMOS IC and achieves 0.4dB insertion loss and 54dB isolation at 2GHz. The 400/spl mu/m/spl times/50/spl mu/m MEMS device is built together on top of the wafers enabling a system-on-chip design.

References

4