Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

Abstract

The effect of random telegraph noise (RTN) on write stability of SRAM cells in sub-0.4V operation is intensively measured and statistically analyzed. RTN of N-curves in Silicon-on-Thin-BOX (SOTB) cells is monitored. By developing statistical models, it is found that, different from bulk SRAM cells operating at high supply voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> ), fail bit rate (FBR) at sub-0.4V is degraded by RTN. The origin of high FBR due to RTN at sub-0.4V is discussed.