A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node

Abstract

We introduce for the first time a novel integration scheme of CBRAM cells, where the Cu electrode is patterned using a subtractive dry-etching process. We demonstrate excellent performances of 30nm-size cells (1μs-write at ≤50μA, >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> endurance, excellent retention at 150°C) as well as scaling potential of CBRAM down to 10nm-node using 5nm-thick Cu electrodes.