Electronics Letters · 1985 · 20 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesTransport PhenomenaField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsCarrier Mobility ModelingEquivalent Series ResistanceGate-dependent Current-voltage BehaviorMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingSeries ResistanceSource Resistance
A simple but general model for explaining the series resistance dependence of transconductance and field-effect mobility is developed in the letter. This model, which enables a quantitative analysis of series resistance effects on the maximum mobility and the corresponding gate voltage, has been successfully tested on short-channel MOSFETs with various channel lengths and external series resistances.