Applied Physics Letters · 2006 · 13 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptical Properties Of SemiconductorsQuantum Well DevicesQuantum WellsSemiconductor Device MaterialsSemiconductor PhysicsBand GapInternal Quantum EfficiencyLight-emitting DevicesOptical Band GapQuantum Well HeterostructuresQuantum Well Light-emitting DiodesQuantum Well Structures
The properties of InSb∕AlxIn1−xSb quantum-well light-emitting diodes have been investigated as a function of temperature from 300to15K. Over the whole range, the peak emission occurred at significantly higher energies than the band gap of InSb but below the band gap of the AlxIn1−xSb barriers, confirming that emission is from the quantum wells. Maximum internal quantum efficiencies of 65% and 85% were measured at 15K for diodes containing 40 and 20nm quantum wells, respectively.
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<i>Semiconductor Opto-Electronics</i>
T. S. Moss, G.J. BURRELL, Brian R. Ellis et al. · Physics Today · 1974 · 473 citations
High-frequency acousto-electric single-photon source
C. L. Foden, V. I. Talyanskii, G. J. Milburn et al. · Physical Review A · 2000 · 90 citations · Full text
Comparison of IR LED gas sensors with thermal source products
Sean Smith, C.H. Wang, J G Crowder et al. · IEE Proceedings - Optoelectronics · 1997 · 37 citations