Sb-surface segregation and the control of compositional abruptness at the interface

Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures

J. M. Moison, C. Guille, F. Houzay et al. · Physical review. B, Condensed matter · 1989 · 418 citations

Natural Sciences, Materials Science, Physics +17

Kinetic model of element III segregation during molecular beam epitaxy of III-III′-V semiconductor compounds

Olivier Dehaese, X. Wallart, F. Mollot · Applied Physics Letters · 1995 · 168 citations

Engineering, Materials Engineering, Materials Science +17

Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy

J-F. Zheng, J. Walker, M. Salmerón et al. · Physical Review Letters · 1994 · 125 citations

Natural Sciences, Materials Science, Physics +17

Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE

J. Nagle, Jean-Pierre Landesman, M. Larive et al. · Journal of Crystal Growth · 1993 · 105 citations

Engineering, Materials Engineering, Materials Science +14

<i>In situ</i> probing at the growth temperature of the surface composition of (InGa)As and (InAl)As

Jean‐Michel Gérard · Applied Physics Letters · 1992 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +17