2005 · 50 citations · 12 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesMixed-signal Integrated Circuit DesignBicmos TechnologyCmos ScalingHigh-speed Circuit DesignHigh-speed Cmos DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsRf Cmos DesignSige Bicmos Design
The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe BiCMOS, and InP-HBT 30-80 Gb/s high-speed circuit in production 130-nm SiGe BiCMOS and InP HBT technologies are compared.
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60GHz transceiver circuits in SiGe bipolar technology
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120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs
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