60GHz transceiver circuits in SiGe bipolar technology

Concepts

EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMixed-signal Integrated Circuit DesignRadio-frequency Integrated CircuitsConversion GainHigh-frequency Amplifier DesignHigh-gain AmplifiersLow-noise AmplifiersNoise FigureRadio-frequency Integrated Circuit DesignTransceiver ArchitecturesTransceiver Design

Abstract

A 60GHz LNA, direct-downconverter, PA, and 20GHz VCO are built in a 200GHz f/sub t/,/f/sub max/, 0.12/spl mu/m SiGe technology. The 10.8mW LNA has 15dB gain, 3.4-4.4dB noise figure and -8.5dBm IIP3. The down converter has 16dB gain, >50dB LO-RF isolation, and 13.4-14.8dB noise figure. The PA delivers 10dBm at 9dB gain.

References

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Engineering, Communication, Electrical Engineering +13

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

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Engineering, Electrical Engineering, Microelectronics +15

Wireless 1.25 Gb/s transceiver module at 60 GHz-band

K. Ohata, K. Maruhashi, Masafumi Ito et al. · 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) · 2003 · 46 citations

Engineering, Electrical Engineering, Microelectronics +16

Wireless 1.25Gb/s transceiver module at 60GHz-band

K. Ohata, K. Maruhashi, Masafumi Ito et al. · 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) · 2005 · 25 citations

Engineering, Computer Engineering, Electrical Engineering +14