Journal of The Electrochemical Society · 2004 · 55 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySemiconductor MaterialsThin FilmsAmorphous SemiconductorsChemical Vapor DepositionSemiconductor Thin FilmsSilicon MaterialsThin-film DepositionThin-film MaterialsFilm UniformityLow-pressure Chemical Vapor DepositionPolycrystalline Film GrowthProcess ParametersSilicon CarbideSilicon Chemical Vapor DepositionTemperature Effects On DepositionX-ray Diffraction Analysis
We report the deposition of 3C-SiC films on an Si(100) substrate from 1,3-disilabutane precursor molecule utilizing a conventional low-pressure chemical vapor deposition (CVD) system. The chemical, structural, and growth properties of the resulting films are investigated as functions of deposition temperature and flow rates. Based on X-ray photoelectron spectroscopy, the films deposited at temperatures as low as 650°C are indeed carbidic. X-ray diffraction analysis indicates the films to be amorphous up to 750°C, above which they become polycrystalline. The effect of process parameters on film uniformity is also reported. Highly uniform films are achieved at 800°C and lower, essentially independent of the flow rate. © 2004 The Electrochemical Society. All rights reserved.
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Silicon carbide as a new MEMS technology
P.M. Sarro · Sensors and Actuators A Physical · 2000 · 416 citations
Monocrystalline silicon carbide nanoelectromechanical systems
Ya‐Tang Yang, K. L. Ekinci, Xuefei Huang et al. · Applied Physics Letters · 2001 · 287 citations · Full text