Predictive compact modeling of HQS effects and thermal noise in 90nm mixed signal/RF CMOS technology

Abstract

Predictive compact models have been developed to describe NQS effects and thermal noise in Intel's 90nm radio-frequency (RF) CMOS (Kuhn, et al., 2002). The physical approach enables modeling transistor performance from DC to RF with one single set of parameters. Quantum correction on classical induced-gate-noise model is observed for the first time in ultra-thin oxide technology.