Concepedia

Local ESD protection structure based on Silicon Controlled Rectifier achieving very low overshoot voltage

Johan Bourgeat, Christophe Entringer

2014 · 14 citations · 9 references

Concepts

Abstract

Abstract- This paper presents a new local ESD protection structure. This structure is based on static triggered SCR and realized in a 45nm CMOS technology node. This protection achieves very low static triggering voltage, low on-resistance, low DC leakage current for off configurations. This new structure is latch-up free and fail safe. I.

References

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