On the determination of interface state density in n-InP Schottky structures by current–voltage measurements

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

Unified defect model and beyond

W. E. Spicer, I. Lindau, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1980 · 646 citations

Natural Sciences, Materials Science, Physics +17

Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes

Kimiyoshi Yamasaki, Minoru Yoshida, Takuo Sugano · Japanese Journal of Applied Physics · 1979 · 295 citations

Engineering, Electrical Engineering, Materials Science +15

Semi-insulating III–v materials

P R Jay · Physics Bulletin · 1980 · 174 citations

Engineering, Electrical Engineering, Physics +12

On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

N. Newman, W. E. Spicer, T. Kendelewicz et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 116 citations

Natural Sciences, Materials Science, Physics +17