A comprehensive study of bipolar operation in resistive switching memory devices

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations

Engineering, Materials Engineering, Materials Science +15

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Daniele Ielmini · IEEE Transactions on Electron Devices · 2011 · 527 citations

Engineering, Electrical Engineering, Materials Science +17

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Stefano Larentis, F. Nardi, Simone Balatti et al. · IEEE Transactions on Electron Devices · 2012 · 485 citations

Engineering, Electrical Engineering, Materials Science +17

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

Ximeng Guan, Shimeng Yu, H.‐S. Philip Wong · IEEE Transactions on Electron Devices · 2012 · 342 citations

Engineering, Electrical Engineering, Materials Science +17

First-principles study of native point defects in hafnia and zirconia

Jie Zheng, Gerbrand Ceder, Thomas Maxisch et al. · Physical Review B · 2007 · 236 citations

Natural Sciences, Materials Science, Physics +17