Electronics Letters · 1981 · 38 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsTransport PhenomenaCarrier TransportDopingHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCarrier Transport MechanismsElectron-phonon ScatteringGainHeterostructure DevicesHeterostructure MaterialsHeterostructuresPhonon ScatteringTransport In Heterostructures
Mobilities of undoped GaAs-n-doped AlxGa1−xAs heterostructures are shown to present a maximum as a function of the thickness of the undoped AlxGa1−xAs spacer layer. This maximum increases as the temperature decreases. The transition temperature above which phonon scattering is dominant decreases as d increases. Heterostructure FETs working at 11 GHz give an 8 dB gain.
1