Concepedia

Subthreshold Logic Gates

Subthreshold Logic Gates is a class of digital logic circuits that operate with transistors biased in the subthreshold region, distinguishing them by enabling ultra-low-power computation through the exploitation of exponential current-voltage characteristics below the transistor threshold voltage.

36

Publications

1.5K

Citations

110

Authors

46

Institutions

Publications per year

2017–2026

3

Parents

Publications

36

Ultra-low power digital subthreshold logic circuits

H. Soeleman, Kaushik Roy · 1999 · 188 citations · Full text

, , +16

Understanding DC Behavior of Subthreshold CMOS Logic Through Closed-Form Analysis

Massimo Alioto · IEEE Transactions on Circuits and Systems I Regular Papers · 2010 · 181 citations

, , +17

Nanometer Device Scaling in Subthreshold Logic and SRAM

Scott Hanson, Mingoo Seok, Dennis Sylvester et al. · IEEE Transactions on Electron Devices · 2008 · 128 citations

, , +16

Device and Circuit Co-Design Robustness Studies in the Subthreshold Logic for Ultralow-Power Applications for 32 nm CMOS

Ramesh Vaddi, Sudeb Dasgupta, Rajesh Agarwal · IEEE Transactions on Electron Devices · 2010 · 104 citations

, , +17

Ultra Low Power Junctionless MOSFETs for Subthreshold Logic Applications

Mukta Singh Parihar, Dipankar Ghosh, Abhinav Kranti · IEEE Transactions on Electron Devices · 2013 · 90 citations

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1–5 of 36

Authors

110

  1. YL
    Yusuf Leblebici

    École Polytechnique Fédérale de Lausanne, Switzerland

    3 publications · 52 citations

    3

    h-index

  2. FC
    F. Cannillo

    IMEC, Belgium

    3 publications · 66 citations

    3

    h-index

  3. MA
    Massimo Alioto

    National University of Singapore, Singapore

    3 publications · 52 citations

    3

    h-index

  4. TS
    Tor Sverre Lande

    University of Oslo, Norway

    2 publications · 49 citations

    2

    h-index

  5. JL
    Jean-Didier Legat

    UCLouvain, Belgium

    2 publications · 49 citations

    2

    h-index

1–5 of 110

Institutions

46

  1. University of Siena

    Siena, Italy

    3 h-index

    3 publications

    219 citations

  2. École Polytechnique Fédérale de Lausanne

    Lausanne, Switzerland

    3 h-index

    6 publications

    105 citations

  3. University of Oslo

    Oslo, Norway

    3 h-index

    5 publications

    107 citations

  4. Imperial College London

    London, United Kingdom

    3 h-index

    6 publications

    123 citations

  5. University of Calabria

    Rende, Italy

    2 h-index

    6 publications

    189 citations

  6. Washington State University

    Pullman, United States

    2 h-index

    2 publications

    33 citations

  7. Purdue University West Lafayette

    West Lafayette, United States

    2 h-index

    4 publications

    412 citations

  8. Toshiba (Japan)

    Tokyo, Japan

    2 h-index

    11 publications

    236 citations

1–8 of 46

Venues

  1. IEEE Transactions on Electron Devices

    4 publications · 350 citations

    4

    h-index

  2. 3

    h-index

  3. Electronics Letters

    2 publications · 37 citations

    2

    h-index

  4. 2D Materials

    1 publications · 53 citations

    1

    h-index

  5. IEEE Electron Device Letters

    1 publications · 51 citations

    1

    h-index

1–5