Spin-transfer Torque Memory

Spin-Transfer Torque Memory is a non-volatile memory device that utilizes the spin-transfer torque effect to switch the magnetization orientation of a magnetic tunnel junction, distinguishing it from other memory technologies by enabling current-induced magnetic switching without an external magnetic field.

548

Publications

28.9K

Citations

1.5K

Authors

301

Institutions

Publications per year

2017–2026

195

Variants

Stt-mramStt-ram

Authors

1.5K

  1. YC
    Yiran Chen

    Duke University, United States

    44 publications · 1.8K citations

    27

    h-index

  2. WZ
    Weisheng Zhao

    Beihang University, China

    35 publications · 1.9K citations

    25

    h-index

  3. HL
    Hai Li

    University of Pittsburgh, United States

    31 publications · 1.3K citations

    21

    h-index

  4. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    29 publications · 1.7K citations

    20

    h-index

  5. YX
    Yuan Xie

    Pennsylvania State University, United States

    27 publications · 2.6K citations

    18

    h-index

1–5 of 1.5K

Venues

  1. IEEE Transactions on Magnetics

    41 publications · 2.2K citations

    23

    h-index

  2. 20

    h-index

  3. 16

    h-index

  4. Applied Physics Letters

    15 publications · 758 citations

    14

    h-index

  5. IEEE Transactions on Electron Devices

    19 publications · 839 citations

    14

    h-index

1–5