Phase Shift Masks
Phase Shift Masks is a photolithographic masking technique in semiconductor manufacturing that enhances image resolution by exploiting constructive and destructive interference of light waves through precisely engineered phase-modulating regions on the mask, thereby distinguishing it from conventional binary intensity masks.
281
Publications
9.1K
Citations
920
Authors
215
Institutions
Publications per year
2017–2026
24
Variants
Phase-shift Masks
Parents
281
1–5 of 281
920
Fraunhofer Institute for Integrated Systems and Device Technology, Germany
11 publications · 257 citations
11
h-index
8
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8
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8
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7
h-index
1–5 of 920
215
IBM (United States)
Armonk, United States
15 h-index
67 publications
4.6K citations
University of California, Berkeley
Berkeley, United States
12 h-index
30 publications
944 citations
Intel (United States)
Santa Clara, United States
10 h-index
37 publications
848 citations
Hitachi (Japan)
Tokyo, Japan
10 h-index
39 publications
1.2K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
8 h-index
20 publications
725 citations
Fraunhofer Institute for Integrated Systems and Device Technology
Erlangen, Germany
8 h-index
21 publications
503 citations
AT&T (United States)
Bedminster, United States
8 h-index
28 publications
534 citations
IMEC
Leuven, Belgium
7 h-index
13 publications
269 citations
1–8 of 215
89 publications · 1.8K citations
23
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JJAP · 20 publications · 469 citations
13
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13 publications · 642 citations
13
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19 publications · 546 citations
13
h-index
10 publications · 490 citations
10
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