Concepedia

Narrow Width Effects

Narrow Width Effects is a short-channel effect in semiconductor device physics wherein the threshold voltage of a MOSFET increases due to the lateral confinement of the channel region, leading to enhanced carrier confinement and reduced current drive in narrow-width transistors.

125

Publications

5.7K

Citations

469

Authors

182

Institutions

Publications per year

2017–2026

21

Variants

Narrow-width Effects

Parents

Publications

125

Automatic Ship Detection in Remote Sensing Images from Google Earth of Complex Scenes Based on Multiscale Rotation Dense Feature Pyramid Networks

Xue Yang, Hao Sun, Kun Fu et al. · Remote Sensing · 2018 · 561 citations · Full text

, , +14

Review of: "The changes in the width of the nano transistor channel due to the field effect of the gate around can cause undesirable changes and loss of mobility"

brain Cita O · Qeios · 2023 · 468 citations · Full text

, , +15

Energy-dependent width effects in e+e−-annihilation near the Z-boson pole

D.Y. Bardin, A. Leike, T. Riemann et al. · Physics Letters B · 1988 · 250 citations

, , +8

Minimal model of a diphoton resonance: Production without gluon couplings

Csaba Csáki, Jay Hubisz, John Terning · Physical review. D/Physical review. D. · 2016 · 152 citations · Full text

, , +15

Interacting resonances in atomic spectroscopy

J P Connerade, A.M. Lane · Reports on Progress in Physics · 1988 · 125 citations

, , +16

1–5 of 125

Authors

469

  1. LA
    L.A. Akers

    Arizona State University, United States

    4 publications · 200 citations

    4

    h-index

  2. CY
    C.–P. Yuan

    Michigan State University, United States

    4 publications · 327 citations

    4

    h-index

  3. RS
    R. Schwienhorst

    Michigan State University, United States

    3 publications · 226 citations

    3

    h-index

  4. SJ
    Senthil Jayapal

    Imec the Netherlands, Netherlands

    3 publications · 90 citations

    3

    h-index

  5. AC
    Amitava Chatterjee

    Jadavpur University, India

    3 publications · 73 citations

    3

    h-index

1–5 of 469

Institutions

182

  1. Texas Instruments (United States)

    Dallas, United States

    5 h-index

    25 publications

    766 citations

  2. Arizona State University

    Tempe, United States

    5 h-index

    11 publications

    581 citations

  3. Michigan State University

    East Lansing, United States

    4 h-index

    12 publications

    1K citations

  4. University of Science and Technology of China

    Hefei, China

    4 h-index

    21 publications

    486 citations

  5. University of Southampton

    Southampton, United Kingdom

    4 h-index

    11 publications

    268 citations

  6. Intel (United States)

    Santa Clara, United States

    3 h-index

    16 publications

    911 citations

  7. Taiwan Semiconductor Manufacturing Company (Taiwan)

    Hsinchu, Taiwan

    3 h-index

    17 publications

    207 citations

  8. Motorola (United States)

    Schaumburg, United States

    3 h-index

    11 publications

    272 citations

1–8 of 182

Venues

  1. IEEE Transactions on Electron Devices

    15 publications · 521 citations

    14

    h-index

  2. IEEE Electron Device Letters

    7 publications · 185 citations

    7

    h-index

  3. Journal of High Energy Physics

    JHEP · 5 publications · 170 citations

    5

    h-index

  4. Electronics Letters

    4 publications · 156 citations

    4

    h-index

  5. Solid-State Electronics

    4 publications · 72 citations

    4

    h-index

1–5