Concepedia

Memory Wear Modeling

Memory Wear Modeling is a computational framework that characterizes the degradation of solid-state storage media over repeated write and erase cycles by quantifying the accumulation of physical wear at the memory cell level.

28

Publications

738

Citations

106

Authors

31

Institutions

Publications per year

2017–2026

6

Parents

Publications

28

Analytic modeling of SSD write performance

Peter Desnoyers · 2012 · 124 citations

, , +17

A mean field model for a class of garbage collection algorithms in flash-based solid state drives

Benny Van Houdt · 2013 · 69 citations

, , +15

How i learned to stop worrying and love flash endurance

Vidyabhushan Mohan, Taniya Siddiqua, Sudhanva Gurumurthi et al. · USENIX conference on Hot topics in storage and file systems · 2010 · 62 citations

, , +17

A mean field model for a class of garbage collection algorithms in flash-based solid state drives

Benny Van Houdt · ACM SIGMETRICS Performance Evaluation Review · 2013 · 46 citations

, , +15

Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

Zhongqiang Wang, Stefano Ambrogio, Simone Balatti et al. · IEEE Transactions on Electron Devices · 2016 · 38 citations · Full text

, , +16

1–5 of 28

Authors

106

  1. FW
    Fei Wu

    Huazhong University of Science and Technology, China

    2 publications · 28 citations

    2

    h-index

  2. CZ
    Cristian Zambelli

    University of Ferrara, Italy

    2 publications · 26 citations

    2

    h-index

  3. CX
    Changsheng Xie

    Huazhong University of Science and Technology, China

    2 publications · 28 citations

    2

    h-index

  4. SG
    Sudhanva Gurumurthi

    University of Virginia, United States

    2 publications · 86 citations

    2

    h-index

  5. BV
    Benny Van Houdt

    University of Antwerp, Belgium

    2 publications · 115 citations

    2

    h-index

1–5 of 106

Institutions

31

  1. Chongqing University

    Chongqing, China

    2 h-index

    6 publications

    90 citations

  2. University of Ferrara

    Ferrara, Italy

    2 h-index

    6 publications

    78 citations

  3. University of Antwerp

    Antwerp, Belgium

    2 h-index

    2 publications

    115 citations

  4. Tsinghua University

    Beijing, China

    2 h-index

    7 publications

    176 citations

  5. Institute of Microelectronics

    Beijing, China

    2 h-index

    6 publications

    74 citations

  6. Huazhong University of Science and Technology

    Wuhan, China

    2 h-index

    8 publications

    106 citations

  7. IBM (United States)

    Armonk, United States

    1 h-index

    1 publications

    25 citations

  8. Southwest University

    Chongqing, China

    1 h-index

    5 publications

    100 citations

1–8 of 31

Venues

  1. IEEE Electron Device Letters

    2 publications · 46 citations

    2

    h-index

  2. Microelectronics Reliability

    2 publications · 23 citations

    2

    h-index

  3. IEEE Transactions on Consumer Electronics

    1 publications · 17 citations

    1

    h-index

  4. ACM Transactions on Storage

    TOS · 1 publications · 11 citations

    1

    h-index

  5. Journal of Network and Computer Applications

    JNCA · 1 publications · 10 citations

    1

    h-index

1–5