Memory Refresh Techniques
Memory Refresh Techniques is a hardware-level methodology employed in dynamic random-access memory systems to periodically recharge capacitive storage elements, thereby preserving data integrity by counteracting charge leakage over time.
40
Publications
2.4K
Citations
160
Authors
46
Institutions
Publications per year
2017–2026
11
Parents
40
An experimental study of data retention behavior in modern DRAM devices
Jamie Liu, Ben Jaiyen, Yoongu Kim et al. · 2013 · 287 citations
AVATAR: A Variable-Retention-Time (VRT) Aware Refresh for DRAM Systems
Moinuddin K. Qureshi, Dae-Hyun Kim, Samira Khan et al. · 2015 · 218 citations · Full text
DRAM Refresh Mechanisms, Penalties, and Trade-Offs
Ishwar Bhati, Mu-Tien Chang, Zeshan Chishti et al. · IEEE Transactions on Computers · 2015 · 149 citations
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Carnegie Mellon University
Pittsburgh, United States
7 h-index
21 publications
3.1K citations
Intel (United States)
Santa Clara, United States
5 h-index
10 publications
866 citations
ETH Zurich
Zurich, Switzerland
4 h-index
17 publications
1K citations
Samsung (South Korea)
Seoul, South Korea
3 h-index
24 publications
4.5K citations
Seoul National University
Seoul, South Korea
3 h-index
14 publications
557 citations
Georgia Institute of Technology
Atlanta, United States
2 h-index
6 publications
1.1K citations

Shanghai Jiao Tong University
Shanghai, China
2 h-index
12 publications
480 citations
IBM (United States)
Armonk, United States
2 h-index
2 publications
137 citations
1–8 of 46
4 publications · 260 citations
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3 publications · 245 citations
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3 publications · 236 citations
3
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3 publications · 167 citations
3
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1 publications · 45 citations
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