Lithographic Alignment
Lithographic Alignment is a lithographic process parameter that specifies the precise positional correspondence between successive patterning layers in thin film fabrication, distinguished by its reliance on alignment marks and optical or electronic feedback systems to minimize overlay error.
216
Publications
8.6K
Citations
1K
Authors
267
Institutions
Publications per year
2017–2026
22
Parents
216
Methods for carbon nanotubes synthesis—review
Jan Prášek, Jana Drbohlavová, Jana Chomoucká et al. · Journal of Materials Chemistry · 2011 · 775 citations
Natural Sciences, Materials Engineering, Materials Science +17
1–5 of 216
1K
10
h-index
6
h-index
Hong Kong University of Science and Technology, Hong Kong SAR China
5 publications · 227 citations
5
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Institute of Optics and Electronics, Chinese Academy of Sciences, China
5 publications · 160 citations
5
h-index
Hong Kong University of Science and Technology, Hong Kong SAR China
5 publications · 227 citations
5
h-index
1–5 of 1K
267
Massachusetts Institute of Technology
Cambridge, United States
12 h-index
53 publications
1.4K citations

Chinese Academy of Sciences
Beijing, China
8 h-index
38 publications
1.2K citations
ASML (Netherlands)
Veldhoven, The Netherlands
8 h-index
19 publications
427 citations

Lawrence Berkeley National Laboratory
Berkeley, United States
7 h-index
42 publications
928 citations
The University of Texas at Austin
Austin, United States
6 h-index
21 publications
985 citations
IBM (United States)
Armonk, United States
5 h-index
11 publications
371 citations

Hong Kong University of Science and Technology
Hong Kong, Hong Kong
5 h-index
24 publications
885 citations
Institute of Optics and Electronics, Chinese Academy of Sciences
Chengdu, China
5 h-index
22 publications
794 citations
1–8 of 267
22 publications · 586 citations
15
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20 publications · 356 citations
13
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17 publications · 322 citations
13
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11 publications · 854 citations
11
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7 publications · 133 citations
7
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1–5