Epitaxial Interface Modeling

Epitaxial Interface Modeling is a computational modeling framework that specializes in the atomic-scale simulation and prediction of interfacial structures, strain distributions, and defect dynamics in epitaxially grown thin films, distinguishing itself from general interface models by its focus on crystallographic alignment and lattice-mismatch-driven growth phenomena.

67

Publications

3K

Citations

229

Authors

90

Institutions

Publications per year

2017–2026

7

Authors

229

  1. MB
    Marco Bruno

    University of Turin, Italy

    2 publications · 32 citations

    2

    h-index

  2. FR
    Francesco Roberto Massaro

    University of Turin, Italy

    2 publications · 32 citations

    2

    h-index

  3. SD
    S. Das Sarma

    University of Maryland, College Park, United States

    2 publications · 108 citations

    2

    h-index

  4. WA
    W. A. Jesser

    University of Virginia, United States

    2 publications · 64 citations

    2

    h-index

  5. RT
    R. T. Tung

    AT&T (United States), United States

    2 publications · 180 citations

    2

    h-index

1–5 of 229

Venues

  1. Physical review. B, Condensed matter

    PRB · 8 publications · 399 citations

    8

    h-index

  2. Journal of Crystal Growth

    7 publications · 284 citations

    7

    h-index

  3. Physical Review Letters

    PRL · 7 publications · 332 citations

    7

    h-index

  4. Journal of Applied Physics

    4 publications · 692 citations

    4

    h-index

  5. Applied Physics Letters

    3 publications · 176 citations

    3

    h-index

1–5