Atomistic models of interface structures of GaAs-Al Ga1−As (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE

Dynamics of film growth of GaAs by MBE from Rheed observations

J.H. Neave, B.A. Joyce, Peter J. Dobson et al. · Applied Physics A · 1983 · 958 citations

Natural Sciences, Materials Engineering, Materials Science +14

Optical characterization of interface disorder in multi-quantum well structures

Claude Weisbuch, R. Dingle, A. C. Gossard et al. · Solid State Communications · 1981 · 450 citations

Natural Sciences, Materials Science, Physics +16

One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy

H. Sakaki, Masaaki Tanaka, Junji Yoshino · Japanese Journal of Applied Physics · 1985 · 236 citations

Engineering, Materials Engineering, Materials Science +17

Theory of photoluminescence line shape due to interfacial quality in quantum well structures

Jasprit Singh, K. K. Bajaj, S. Chaudhuri · Applied Physics Letters · 1984 · 179 citations

Natural Sciences, Materials Science, Physics +17

Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices

Leon J. Goldstein, Yoshiji Horíkoshi, Seigo Tarucha et al. · Japanese Journal of Applied Physics · 1983 · 150 citations

Natural Sciences, Materials Engineering, Materials Science +16