Concepedia

Electrostatic Discharge Reliability

Electrostatic Discharge Reliability is a semiconductor reliability metric that quantifies a device's ability to withstand electrical damage caused by sudden electrostatic discharges during manufacturing, handling, and operation.

47

Publications

1.3K

Citations

162

Authors

53

Institutions

Publications per year

2017–2026

5

Variants

Esd Reliability

Parents

Publications

47

Improving the ESD failure threshold of silicided n-MOS output transistors by ensuring uniform current flow

T. Polgreen, Amitava Chatterjee · IEEE Transactions on Electron Devices · 1992 · 156 citations

, , +16

The state of the art of electrostatic discharge protection: physics, technology, circuits, design, simulation, and scaling

Steven H. Voldman · IEEE Journal of Solid-State Circuits · 1999 · 97 citations

, , +15

Hot-electron reliability and ESD latent damage

S. Aur, Amitava Chatterjee, T. Polgreen · IEEE Transactions on Electron Devices · 1988 · 64 citations

, , +13

ESA's tools for internal charging

J. Sørensen, D. Rodgers, K.A. Ryden et al. · IEEE Transactions on Nuclear Science · 2000 · 58 citations

, , +17

Degradation of GMR and TMR recording heads using very-short-duration ESD transients

L. Baril, Matthew A. Nichols, A. Wallash · IEEE Transactions on Magnetics · 2002 · 50 citations

, , +17

1–5 of 47

Authors

162

  1. MB
    Marise Bafleur

    Laboratoire d'Analyse et d'Architecture des Systèmes, France

    4 publications · 60 citations

    4

    h-index

  2. NN
    Nicolas Nolhier

    Laboratoire d'Analyse et d'Architecture des Systèmes, France

    3 publications · 47 citations

    3

    h-index

  3. JJ
    Juin J. Liou

    University of Central Florida, United States

    3 publications · 54 citations

    3

    h-index

  4. AC
    Amitava Chatterjee

    Jadavpur University, India

    3 publications · 238 citations

    3

    h-index

  5. JA
    Javier A. Salcedo

    University of Central Florida, United States

    3 publications · 48 citations

    3

    h-index

1–5 of 162

Institutions

53

  1. Centre National de la Recherche Scientifique

    Paris, France

    5 h-index

    22 publications

    302 citations

  2. Laboratoire d'Analyse et d'Architecture des Systèmes

    Toulouse, France

    4 h-index

    16 publications

    242 citations

  3. Texas Instruments (United States)

    Dallas, United States

    4 h-index

    10 publications

    620 citations

  4. Analog Devices (United States)

    Norwood, United States

    3 h-index

    9 publications

    137 citations

  5. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    3 h-index

    7 publications

    133 citations

  6. Université Fédérale de Toulouse Midi-Pyrénées

    Toulouse, France

    2 h-index

    8 publications

    98 citations

  7. IBM (United States)

    Armonk, United States

    2 h-index

    2 publications

    140 citations

  8. University of Central Florida

    Orlando, United States

    2 h-index

    4 publications

    74 citations

1–8 of 53

Venues

  1. IEEE Transactions on Electron Devices

    9 publications · 394 citations

    9

    h-index

  2. Reliability physics

    5 publications · 90 citations

    5

    h-index

  3. 3

    h-index

  4. IEEE Transactions on Magnetics

    2 publications · 64 citations

    2

    h-index

  5. 2

    h-index

1–5