Concepedia

Compositionally Graded Epitaxy

Compositionally Graded Epitaxy is a specialized epitaxial growth technique in which the chemical composition of the deposited crystalline layer is gradually varied across the film thickness to engineer strain relaxation and minimize lattice-mismatch dislocations.

48

Publications

1.7K

Citations

182

Authors

59

Institutions

Publications per year

2017–2026

2

Variants

Compositionally Graded Epitaxial Growth

Parents

Publications

48

Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Shotaro Takeuchi, Yosuke Shimura, Osamu Nakatsuka et al. · Applied Physics Letters · 2008 · 123 citations

, , +17

Cross-sectional specimens for transmission electron microscopy

M. S. Abrahams, C. J. Buiocchi · Journal of Applied Physics · 1974 · 119 citations

, , +17

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

J. Aubin, J. M. Hartmann, Alban Gassenq et al. · Semiconductor Science and Technology · 2017 · 96 citations

, , +16

Misorientation and tetragonal distortion in heteroepitaxial vapor-Grown III–V structures

G.H. Olsen, R. T. Smith · physica status solidi (a) · 1975 · 82 citations

, , +17

Reduction of dislocation densities in heteroepitaxial III−V VPE semiconductors

G.H. Olsen, M. S. Abrahams, C. J. Buiocchi et al. · Journal of Applied Physics · 1975 · 76 citations

, , +17

1–5 of 48

Authors

182

  1. DD
    D. D. Edwall

    Rockwell Automation (United States), United States

    2 publications · 70 citations

    2

    h-index

  2. AN
    A. Nylandsted Larsen

    Aarhus University, Denmark

    2 publications · 55 citations

    2

    h-index

  3. CJ
    C. J. Buiocchi

    RCA (United States), United States

    2 publications · 195 citations

    2

    h-index

  4. RE
    R. E. Nahory

    Core Competence, United States

    2 publications · 26 citations

    2

    h-index

  5. MS
    M. S. Abrahams

    RCA (United States), United States

    2 publications · 195 citations

    2

    h-index

1–5 of 182

Institutions

59

  1. Rockwell Automation (United States)

    Milwaukee, United States

    3 h-index

    6 publications

    280 citations

  2. Laboratoire d'Électronique des Technologies de l'Information

    Grenoble, France

    3 h-index

    10 publications

    563 citations

  3. RCA (United States)

    New York, United States

    3 h-index

    8 publications

    706 citations

  4. AT&T (United States)

    Bedminster, United States

    2 h-index

    4 publications

    149 citations

  5. Aarhus University

    Aarhus, Denmark

    2 h-index

    8 publications

    229 citations

  6. University of California, Santa Barbara

    Santa Barbara, United States

    2 h-index

    7 publications

    121 citations

  7. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    2 h-index

    11 publications

    971 citations

  8. Orange (France)

    Paris, France

    2 h-index

    11 publications

    170 citations

1–8 of 59

Venues

  1. Journal of Crystal Growth

    12 publications · 285 citations

    12

    h-index

  2. Applied Physics Letters

    9 publications · 370 citations

    9

    h-index

  3. Journal of Applied Physics

    6 publications · 344 citations

    6

    h-index

  4. Journal of Electronic Materials

    JEM · 2 publications · 32 citations

    2

    h-index

  5. 2

    h-index

1–5