Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

J. Aubin, J. M. Hartmann, Alban Gassenq, +7

Semiconductor Science and Technology

GeSn heterostructure micro-disk laser operating at 230 K

Quang Minh Thai, N. Pauc, J. Aubin, +7

Optics Express

Materials SciencePhotonicsAdvanced Laser ProcessingOptical MaterialsEngineering +12

Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content

Alban Gassenq, Laurent Milord, J. Aubin, +8

Applied Physics Letters

EngineeringSurface-enhanced Raman ScatteringSpectroscopic PropertyIi-vi SemiconductorGesn Raman Relationship +16

Germanium based photonic components toward a full silicon/germanium photonic platform

Vincent Reboud, Alban Gassenq, J. M. Hartmann, +9

Progress in Crystal Growth and Characterization of Materials

PhotonicsQuantum PhotonicsOptical MaterialsEngineeringPhysics +6

Breakthroughs in 3D Sequential technology

Laurent Brunet, C. Fenouillet-Béranger, P. Batude, +33

EngineeringComputer Architecture3D ModelingComputer-aided DesignIntegrated Circuits +23

Impact of thickness on the structural properties of high tin content GeSn layers

J. Aubin, Jean-Michel Hartmann, Alban Gassenq, +4

Journal of Crystal Growth

Materials ScienceSurface CharacterizationStructural PropertiesEngineeringApplied Physics +3

Pulsed laser annealing for advanced technology nodes: Modeling and calibration

Karim Huet, J. Aubin, Pierre-Edouard Raynal, +12

Applied Surface Science

EngineeringApplied PhysicsLaser ApplicationsLaser Processing TechnologyAdvanced Technology Nodes +4

GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

J. Aubin, Jean‐Michel Hartmann

Journal of Crystal Growth

Materials ScienceMaterials EngineeringEngineeringSurface ScienceChemistry +4

Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content

Alban Gassenq, Laurent Milord, J. Aubin, +8

Applied Physics Letters

Materials SciencePhotonicsGamma Bandgap DeterminationWide-bandgap SemiconductorEngineering +11

Very Low Temperature Epitaxy of Heavily In Situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

J. Aubin, Jean‐Michel Hartmann, Jean‐Paul Barnes, +2

ECS Journal of Solid State Science and Technology

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringLow Temperature Epitaxy +11