Concepedia

Complementary Metal-oxide-semiconductor Biasing

Complementary Metal-Oxide-Semiconductor Biasing is a transistor biasing technique that establishes and stabilizes the operating point of complementary MOSFET pairs in integrated circuits by precisely setting gate-source voltages to ensure balanced current flow and minimal static power dissipation.

261

Publications

13.6K

Citations

910

Authors

275

Institutions

Publications per year

2017–2026

47

Variants

Cmos Biasing

Parents

Publications

261

Matching properties of MOS transistors

Marcel Pelgrom, Aad C.J. Duinmaijer, A.P.G. Welbers · IEEE Journal of Solid-State Circuits · 1989 · 3.3K citations

, , +12

Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits

I.M. Filanovsky, Ahmed Allam · IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications · 2001 · 525 citations

, , +16

Device mismatch and tradeoffs in the design of analog circuits

Peter R. Kinget · IEEE Journal of Solid-State Circuits · 2005 · 471 citations

, , +16

Adaptive biasing CMOS amplifiers

M. Degrauwe, J. Rijmenants, Eric A. Vittoz et al. · IEEE Journal of Solid-State Circuits · 1982 · 280 citations

, , +16

Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

S. Mookerjea, D. K. Mohata, Theresa S. Mayer et al. · IEEE Electron Device Letters · 2010 · 224 citations

, , +13

1–5 of 261

Authors

910

  1. DF
    Denis Flandre

    UCLouvain, Belgium

    5 publications · 135 citations

    5

    h-index

  2. SB
    Sérgio Bampi

    Universidade Federal do Rio Grande do Sul, Brazil

    5 publications · 184 citations

    5

    h-index

  3. HK
    Hamilton Klimach

    Universidade Federal do Rio Grande do Sul, Brazil

    5 publications · 184 citations

    5

    h-index

  4. DC
    David Cordova

    Universidade Federal do Rio Grande do Sul, Brazil

    5 publications · 184 citations

    5

    h-index

  5. BM
    B.A. Minch

    Cornell University, United States

    4 publications · 95 citations

    4

    h-index

1–5 of 910

Institutions

275

  1. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    7 h-index

    49 publications

    4.4K citations

  2. IMEC

    Leuven, Belgium

    7 h-index

    31 publications

    749 citations

  3. KU Leuven

    Leuven, Belgium

    6 h-index

    15 publications

    1.3K citations

  4. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    6 h-index

    13 publications

    316 citations

  5. CEA Grenoble

    Grenoble, France

    6 h-index

    34 publications

    2.2K citations

  6. Motorola (United States)

    Schaumburg, United States

    5 h-index

    13 publications

    440 citations

  7. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    5 h-index

    12 publications

    344 citations

  8. Institut polytechnique de Grenoble

    Grenoble, France

    5 h-index

    16 publications

    374 citations

1–8 of 275

Venues

  1. IEEE Journal of Solid-State Circuits

    21 publications · 5K citations

    18

    h-index

  2. IEEE Transactions on Electron Devices

    18 publications · 972 citations

    16

    h-index

  3. IEEE Electron Device Letters

    16 publications · 694 citations

    14

    h-index

  4. Electronics Letters

    16 publications · 476 citations

    13

    h-index

  5. 9

    h-index

1–5