Concepedia

Bonding-induced Defects

Bonding-Induced Defects is a phenomenon in semiconductor manufacturing characterized by structural imperfections or material anomalies that arise specifically as a direct consequence of the physical and chemical processes involved in wafer bonding.

110

Publications

4.7K

Citations

454

Authors

158

Institutions

Publications per year

2017–2026

21

Parents

Publications

110

Incidence of white spot formation after bonding and banding

Leonard Gorelick, Arnold M. Geiger, A. John Gwinnett · American Journal of Orthodontics · 1982 · 1.1K citations

, , +7

Performance assessment and validation of piezoelectric active-sensors in structural health monitoring

Gyuhae Park, Charles R. Farrar, Francesco Lanza di Scalea et al. · Smart Materials and Structures · 2006 · 264 citations

, , +16

Semiconductor wafer bonding: recent developments

Qiaoling Tong, U. Gösele · Materials Chemistry and Physics · 1994 · 131 citations

, , +14

Near-edge x-ray absorption fine structure study of bonding modifications in BN thin films by ion implantation

I. Jiménez, Alan F. Jankowski, L. J. Terminello et al. · Applied Physics Letters · 1996 · 110 citations · Full text

, , +17

The Bonding Mechanism in Hardboard Manufacture Review Report

Ernst L. Back · Holzforschung · 1987 · 106 citations

, , +12

1–5 of 110

Authors

454

  1. UG
    U. Gösele

    Max Planck Institute of Microstructure Physics, Germany

    4 publications · 197 citations

    4

    h-index

  2. GL
    G. Lucovsky

    North Carolina State University, United States

    3 publications · 111 citations

    3

    h-index

  3. CH
    Christine Harendt

    Institut für Mikroelektronik Stuttgart, Germany

    2 publications · 47 citations

    2

    h-index

  4. TS
    Takashi Sekiguchi

    National Institute for Materials Science, Japan

    2 publications · 23 citations

    2

    h-index

  5. SC
    Songyan Chen

    Xiamen University, China

    2 publications · 59 citations

    2

    h-index

1–5 of 454

Institutions

158

  1. Max Planck Institute of Microstructure Physics

    Halle, Germany

    6 h-index

    15 publications

    375 citations

  2. North Carolina State University

    Raleigh, United States

    4 h-index

    13 publications

    287 citations

  3. Duke University

    Durham, United States

    4 h-index

    7 publications

    418 citations

  4. Lawrence Livermore National Laboratory

    Livermore, United States

    3 h-index

    8 publications

    676 citations

  5. University of California, Santa Barbara

    Santa Barbara, United States

    3 h-index

    8 publications

    143 citations

  6. Lawrence Berkeley National Laboratory

    Berkeley, United States

    3 h-index

    5 publications

    308 citations

  7. The University of Tokyo

    Tokyo, Japan

    3 h-index

    6 publications

    83 citations

  8. Minnan Normal University

    Zhangzhou, China

    2 h-index

    2 publications

    59 citations

1–8 of 158

Venues

  1. Applied Physics Letters

    6 publications · 225 citations

    6

    h-index

  2. Microelectronics Reliability

    5 publications · 216 citations

    5

    h-index

  3. Journal of Electronic Materials

    JEM · 4 publications · 208 citations

    4

    h-index

  4. Applied Surface Science

    4 publications · 77 citations

    4

    h-index

  5. Applied Physics A

    4 publications · 102 citations

    4

    h-index

1–5